CD-SAXS - Revision history

KevinYager: /* References */

2024-09-17T14:21:10Z

‎References

KevinYager: /* See Also */

2018-12-11T15:38:48Z

‎See Also

KevinYager: /* Block-copolymer */

2017-10-12T20:51:49Z

‎Block-copolymer

KevinYager: /* See Also */

2015-09-02T13:18:22Z

‎See Also

KevinYager: /* Block-copolymer */

2015-08-13T12:47:48Z

‎Block-copolymer

KevinYager: /* Lithographic structures */

2015-08-13T12:47:01Z

‎Lithographic structures

KevinYager: /* Lithographic structures */

2015-07-11T19:31:52Z

‎Lithographic structures

KevinYager: /* See Also */

2015-01-20T18:00:15Z

‎See Also

KevinYager: /* See Also */

2015-01-20T17:59:36Z

‎See Also

KevinYager at 21:18, 12 January 2015

2015-01-12T21:18:30Z

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 * Daniel F. Sunday, Matthew R. Hammond, Chengqing Wang, Wen-li Wu, Dean M. Delongchamp, Melia Tjio, Joy Y. Cheng, Jed W. Pitera, and R. Joseph Kline [http://pubs.acs.org/doi/abs/10.1021/nn5029289 Determination of the Internal Morphology of Nanostructures Patterned by Directed Self Assembly] ''ACS Nano'' '''2014''', 8 (8), 8426-8437 [http://dx.doi.org/10.1021/nn5029289 doi: 10.1021/nn5029289]
 * Khaira, G., Doxastakis, M., Bowen, A., Ren, J., Suh, H.S., Segal-Peretz, T., Chen, X., Zhou, C., Hannon, A.F., Ferrier, N.J., Vishwanath, V., Sunday, D.F., Gronheid, R., Kline, R.J., de Pablo, J.J., Nealey, P.F., [http://pubs.acs.org/doi/full/10.1021/acs.macromol.7b00691 Derivation of Multiple Covarying Material and Process Parameters Using Physics-Based Modeling of X-ray Data] ''Macromolecules'' '''2017''', 50, 7783–7793. [http://dx.doi.org/10.1021/acs.macromol.7b00691 doi:10.1021/acs.macromol.7b00691]
 ==See Also==

← Older revision		Revision as of 15:38, 11 December 2018
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	* [[GTSAXS]] can measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image without distortion, but imposes constraints on sample geometry.		* [[GTSAXS]] can measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image without distortion, but imposes constraints on sample geometry.
	* [http://www.nist.gov/mml/msed/functional_polymer/dimensional-metrology.cfm NIST Dimensional Metrology for Nanoscale Patterns]		* [http://www.nist.gov/mml/msed/functional_polymer/dimensional-metrology.cfm NIST Dimensional Metrology for Nanoscale Patterns]
		+	* [https://go.usa.gov/xPz5q NIST tutorial video]

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 *  Daniel F. Sunday ; Matthew R. Hammond ; Chengqing Wang ; Wen-li Wu ; R. Joseph Kline ; Gila E. Stein [http://nanolithography.spiedigitallibrary.org/article.aspx?articleid=1727051 Three-dimensional x-ray metrology for block copolymer lithography line-space patterns] ''Journal of Micro/Nanolithography, MEMS, and MOEMS'' '''2013''', 12 (3), 031103 [http://dx.doi.org/10.1117/1.JMM.12.3.031103 doi: 10.1117/1.JMM.12.3.031103]
 * Daniel F. Sunday, Matthew R. Hammond, Chengqing Wang, Wen-li Wu, Dean M. Delongchamp, Melia Tjio, Joy Y. Cheng, Jed W. Pitera, and R. Joseph Kline [http://pubs.acs.org/doi/abs/10.1021/nn5029289 Determination of the Internal Morphology of Nanostructures Patterned by Directed Self Assembly] ''ACS Nano'' '''2014''', 8 (8), 8426-8437 [http://dx.doi.org/10.1021/nn5029289 doi: 10.1021/nn5029289]
 ==See Also==

@@ Line 31: / Line 31: @@
 ==See Also==
 * [[GISAXS]] can directly measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image, but introduces a [[refraction distortion]] and [[beam projection]].
 * [[GTSAXS]] can measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image without distortion, but imposes constraints on sample geometry.
 * [http://www.nist.gov/mml/msed/functional_polymer/dimensional-metrology.cfm NIST Dimensional Metrology for Nanoscale Patterns]

@@ Line 26: / Line 26: @@
 * Ronald L. Jones, Tengjiao Hu, Christopher L. Soles, Eric K. Lin, Ronald M. Reano, Stella W. Pang, and Diego M. Casa [http://pubs.acs.org/doi/abs/10.1021/nl061086i Real-Time Shape Evolution of Nanoimprinted Polymer Structures during Thermal Annealing] ''Nano Letters'' ''2006''', 6 (8), 1723-1728 [http://dx.doi.org/10.1021/nl061086i doi: 10.1021/nl061086i]
-===Block-copolymer===
+===[[Block-copolymer]]===
 *  Daniel F. Sunday ; Matthew R. Hammond ; Chengqing Wang ; Wen-li Wu ; R. Joseph Kline ; Gila E. Stein [http://nanolithography.spiedigitallibrary.org/article.aspx?articleid=1727051 Three-dimensional x-ray metrology for block copolymer lithography line-space patterns] ''Journal of Micro/Nanolithography, MEMS, and MOEMS'' '''2013''', 12 (3), 031103 [http://dx.doi.org/10.1117/1.JMM.12.3.031103 doi: 10.1117/1.JMM.12.3.031103]
 * Daniel F. Sunday, Matthew R. Hammond, Chengqing Wang, Wen-li Wu, Dean M. Delongchamp, Melia Tjio, Joy Y. Cheng, Jed W. Pitera, and R. Joseph Kline [http://pubs.acs.org/doi/abs/10.1021/nn5029289 Determination of the Internal Morphology of Nanostructures Patterned by Directed Self Assembly] ''ACS Nano'' '''2014''', 8 (8), 8426-8437 [http://dx.doi.org/10.1021/nn5029289 doi: 10.1021/nn5029289]

@@ Line 19: / Line 19: @@
 * Chengqing Wang ; Kwang-Woo Choi ; Yi-Ching Chen ; Jimmy Price ; Derek L. Ho ; Ronald L. Jones ; Christopher Soles ; Erik K. Lin ; Wen-Li Wu ; Benjamin D. Bunday [http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1336402 Nonplanar high-k dielectric thickness measurements using CD-SAXS] ''Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII'' '''2009''', 72722M [http://dx.doi.org/10.1117/12.813757 10.1117/12.813757]
 * Charles M. Settens; Aaron Cordes; Benjamin D. Bunday; Abner F. Bello; Vimal K. Kamineni; Abhijeet Paul; Jody Fronheiser; Richard J. Matyi  [http://spie.org/Publications/Journal/10.1117/1.JMM.13.4.041408 Assessment of critical dimension small-angle x-ray scattering measurement approaches for FinFET fabrication process monitoring] ''Journal of Micro/Nanolithography, MEMS, and MOEMS'' '''2014''', 13 (4), 041408 [http://dx.doi.org/10.1117/1.JMM.13.4.041408 doi: 10.1117/1.JMM.13.4.041408]
 ===Nanoimprinted polymer===

@@ Line 16: / Line 16: @@
 ===Lithographic structures===
 * Chengqing Wang ; Ronald L. Jones ; Eric K. Lin ; Wen-li Wu ; John S. Villarrubia ; Kwang-Woo Choi ; James S. Clarke ; Bryan J. Rice ; Michael J. Leeson ; Jeanette Roberts ; Robert Bristol ; Benjamin Bunday  [http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1300174 Line edge roughness characterization of sub-50nm structures using CD-SAXS: round-robin benchmark results] ''Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI'' '''2007''', 651810 [http://dx.doi.org/10.1117/12.725380 doi: 10.1117/12.725380]
 * Chengqing Wang ; Kwang-Woo Choi ; Yi-Ching Chen ; Jimmy Price ; Derek L. Ho ; Ronald L. Jones ; Christopher Soles ; Erik K. Lin ; Wen-Li Wu ; Benjamin D. Bunday [http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1336402 Nonplanar high-k dielectric thickness measurements using CD-SAXS] ''Proc. SPIE 7272, Metrology, Inspection, and Process Control for Microlithography XXIII'' '''2009''', 72722M [http://dx.doi.org/10.1117/12.813757 10.1117/12.813757]
 * Charles M. Settens; Aaron Cordes; Benjamin D. Bunday; Abner F. Bello; Vimal K. Kamineni; Abhijeet Paul; Jody Fronheiser; Richard J. Matyi  [http://spie.org/Publications/Journal/10.1117/1.JMM.13.4.041408 Assessment of critical dimension small-angle x-ray scattering measurement approaches for FinFET fabrication process monitoring] ''Journal of Micro/Nanolithography, MEMS, and MOEMS'' '''2014''', 13 (4), 041408 [http://dx.doi.org/10.1117/1.JMM.13.4.041408 doi: 10.1117/1.JMM.13.4.041408]

← Older revision		Revision as of 18:00, 20 January 2015
Line 31:		Line 31:
	* [[GISAXS]] can directly measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image, but introduces a [[refraction distortion]] and [[beam projection]].		* [[GISAXS]] can directly measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image, but introduces a [[refraction distortion]] and [[beam projection]].
	* [[GTSAXS]] can measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image without distortion, but imposes constraints on sample geometry.		* [[GTSAXS]] can measure the <math>\scriptstyle (q_y, q_z)</math> plane in a single image without distortion, but imposes constraints on sample geometry.
		+	* [http://www.nist.gov/mml/msed/functional_polymer/dimensional-metrology.cfm NIST Dimensional Metrology for Nanoscale Patterns]

@@ Line 1: / Line 1: @@
 '''Critical-Dimension Small-Angle X-ray Scattering''' ('''CD-SAXS''') is an [[x-ray]] [[scattering]] technique that can be used to reconstruct the in-plane and out-of-plane structure of nanostructured thin-films. The technique consists of collecting a series of transmission [[SAXS]] images, at a variety of [[sample orientation|sample rotation angles]]. These <math>\scriptstyle (q_x, q_y)</math> images can be combined to reconstruct the 3D [[reciprocal-space]], in particular probing the <math>\scriptstyle (q_y, q_z)</math> slice that contains both in-plane and out-of-plane (film normal direction) information.
-The technique derives its name from CD-SEM, a [[realspace]] microscopy used measure the 'critical dimensions' of a structure. CD-SAXS can also be called '''rotational-SAXS''' ('''RSAXS'''); indeed the neutron variant is typically called [[RSANS]]. It is closely related to a variety of other scattering/diffraction techniques that involve rotating the sample in order to reconstruct reciprocal-space (c.f. [[pole figure]]s).
+The technique derives its name from CD-SEM, a [[realspace]] microscopy used measure the 'critical dimensions' of a structure. CD-SAXS can also be called '''rotational-SAXS''' ('''RSAXS'''); indeed the neutron variant is typically called [[RSANS]]. It is closely related to a variety of other scattering/diffraction techniques that involve rotating the sample in order to [[reciprocal-space mapping|reconstruct reciprocal-space]] (c.f. [[pole figure]]s).
 CD-SEM is frequently used in the lithography and nanofabrication industry as a metrology for the quality of fabrication process. Similarly, CD-SAXS is ideally suited to quantifying the average structure of well-defined entities such as lithographic line-gratings. Indeed, CD-SAXS can reliably probe a grating's repeat period, height, and sidewall angle (or, more generally, the grating's cross-sectional profile). In principle, this technique can quantify aspects of defects and disorder (e.g. line-edge roughness, LER).